Dielectric Treatments for Carbon Nanotube Devices

ABSTRACT

Dielectric treatments for carbon nanotube devices are provided. In one aspect, a method for forming a carbon nanotube-based device is provided. The method includes: providing at least one carbon nanotube disposed on a first dielectric; removing contaminants from surfaces of the first dielectric; and depositing a second dielectric onto the first dielectric and at least partially surrounding the at least one carbon nanotube. A carbon nanotube-based device is also provided.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. application Ser. No.15/287,342 filed on Oct. 6, 2016, the disclosure of which isincorporated by reference herein.

FIELD OF THE INVENTION

The present invention relates to carbon nanotube (CNT) devices, and moreparticularly, to dielectric treatments for CNT devices.

BACKGROUND OF THE INVENTION

Based on their unique properties, carbon nanotubes (CNT) are beinginvestigated for use in a variety of fields such as in electronics,displays, photovoltaics, and energy storage. One particularly beneficialapplication would be in field-effect transistors (FETs) for futurecomplementary metal oxide semiconductor (CMOS) logic technology nodes.

Circuits including CNT-based FETs often exhibit high threshold voltage(Vt) variability, rendering them useless for practical use. Given theknown sensitivity of CNTs to individual electrical charges or dipolesnearby, this variability may be due to randomly distributed charges ordipoles at material surfaces or interfaces near the CNT. See, forexample, Cao et al., “Origins and Characteristics of the ThresholdVoltage Variability of Quasiballistic Single-Walled Carbon NanotubeField-Effect Transistors,” ACS Nano 9, pgs. 1936-1944 (February 2015).

Therefore, techniques for minimizing electrical disturbances of the CNTsin these devices would be desirable.

SUMMARY OF THE INVENTION

The present invention provides dielectric treatments for carbon nanotubedevices. In one aspect of the invention, a method for forming a carbonnanotube-based device is provided. The method includes: providing atleast one carbon nanotube disposed on a first dielectric; removingcontaminants from surfaces of the first dielectric; and depositing asecond dielectric onto the first dielectric and at least partiallysurrounding the at least one carbon nanotube.

In another aspect of the invention, a carbon nanotube-based device isprovided. The carbon nanotube-based device includes: a first dielectric;at least one carbon nanotube disposed on the first dielectric; a recessin the first dielectric beneath a center portion of the at least onecarbon nanotube; a second dielectric disposed on the first dielectric,wherein the second dielectric fully surrounds the at least one carbonnanotube in the recess, and wherein an interface between the firstdielectric and the second dielectric in the recess is separated from theat least one carbon nanotube by a distance d of from about 1 nanometerto about 5 nanometers, and ranges therebetween.

A more complete understanding of the present invention, as well asfurther features and advantages of the present invention, will beobtained by reference to the following detailed description anddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating an exemplary methodology for forming acarbon nanotube (CNT)-based device according to an embodiment of thepresent invention;

FIG. 2 is a cross-sectional diagram illustrating at least one CNT havingbeen deposited onto a first dielectric film according to an embodimentof the present invention;

FIG. 3 is a cross-sectional diagram illustrating the first dielectrichaving been modified to remove contaminants from the first dielectricand to etch-back the first dielectric beneath a central portion of theCNT(s) according to an embodiment of the present invention;

FIG. 3A is a cross-sectional diagram illustrating, according to analternate embodiment, the first dielectric having been modified toremove contaminants from the first dielectric without etch-backaccording to an embodiment of the present invention;

FIG. 4 is a cross-sectional diagram illustrating a second dielectricfilm having been deposited onto the first dielectric and fullysurrounding the CNT(s) in the recess according to an embodiment of thepresent invention;

FIG. 4A is a cross-sectional diagram illustrating, according to thealternate embodiment, a second dielectric film having been depositedonto the first dielectric (without recess) and partially surrounding theCNT(s) according to an embodiment of the present invention;

FIG. 5 is a cross-sectional diagram illustrating source and draincontacts having been formed on opposite ends of the CNT(s) according toan embodiment of the present invention;

FIG. 6 is a cross-sectional diagram illustrating a gate having beenformed over the CNT(s), separated from the CNT(s) by the seconddielectric according to an embodiment of the present invention;

FIG. 7 is a top-down view of a single CNT device according to anembodiment of the present invention;

FIG. 8 is a top-down view of a multiple aligned CNT device according toan embodiment of the present invention;

FIG. 9 is a top-down view of a multiple random CNT mesh device accordingto an embodiment of the present invention;

FIG. 10 is a diagram illustrating an exemplary methodology for surfaceclean and etch back of the first dielectric according to an embodimentof the present invention; and

FIG. 11 is a diagram illustrating an exemplary methodology for in-situgrowth of horizontally-aligned CNTs from a vertical surface according toan embodiment of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

As described above, randomly distributed charges or dipoles at materialsurfaces or interfaces near carbon nanotubes (CNTs) result in highthreshold voltage (Vt) variability in devices containing the CNTs.Advantageously, provided herein are techniques for minimizing thechemical species that generate these electronic disturbances. Suchchemical species can include, but are not limited to, metals and organicspecies. This approach for minimizing chemical species near the CNTsbroadly applies to a variety of applications including, but not limitedto, CNT field-effect transistors (FETs), CNT interconnects, etc.

As will be described in detail below, after depositing a CNT(s) on adielectric film, the dielectric film is modified (e.g., cleaned toremove adventitious contamination and/or to etch it back), and anotherdielectric film is deposited around/encapsulating at least a portion ofthe CNT(s). By removing the adventitious contamination, the cleaningremoves charges and dipoles near the CNT(s). The etch backadvantageously provides all-around access to the CNT(s) enabling fullencapsulation, as well as it places the interface between the twodielectric films away from the CNT(s).

By way of example only, suitable dielectrics include, but are notlimited to, silicon oxide (SiO₂), silicon nitride (Si₃N₄) and/or high-κdielectrics such as aluminum oxide (Al₂O₃), hafnium oxide (HfO₂),zirconium oxide (ZrO₂), titanium oxide (TiO₂), lanthanum oxide (La₂O₃),and/or any combinations thereof. For instance, any mixture or multilayerof these foregoing dielectrics may be used in accordance with thepresent techniques. The term “high-κ” as used herein refers to amaterial having a relative dielectric constant κ which is much higherthan that of silicon dioxide (e.g., a dielectric constant κ=25 for HfO₂rather than 4 for silicon dioxide).

An overview of the present techniques is now provided by way ofreference to methodology 100 of FIG. 1. In step 102, at least one carbonnanotube (CNT) is deposited or in-situ grown on a first dielectric. CNTsare allotropes of carbon having a cylindrical nanostructure. The presenttechniques may be applied to applications involving a single CNT (suchas a CNT-based transistor with a single CNT spanning a source anddrain), or those having multiple aligned or randomly ordered (e.g.,meshes) CNTs.

As provided above, suitable dielectrics for the first dielectricinclude, but are not limited to, SiO₂, Si₃N₄, Al₂O₃, HfO₂, ZrO₂, TiO₂,La₂O₃, and combinations thereof. As will be described in detail below,the first dielectric is preferably present on a substrate. The substratecan have a number of different configurations depending on theparticular application at hand. For instance, the substrate might simplybe a standard semiconductor substrate, such as a silicon (Si), germanium(Ge), silicon germanium (SiGe), etc. substrate on which the firstdielectric layer is formed or deposited. By way of example only, asilicon-on-insulator or SOI wafer includes a SOI layer separated from asubstrate by a buried insulator. When the insulator is an oxide, it isoften referred to as a buried oxide or BOX. According to an exemplaryembodiment, the BOX layer in a standard SOI wafer may serve as the firstdielectric (from which the SOI layer has been removed).

According to another exemplary embodiment, the present techniques may beimplemented in conjunction with a back-gated device configuration. Inthat case, the substrate or a portion thereof can be electricallyconductive so as to serve as a back gate of the device. The firstdielectric (on the substrate) would then serve as a gate dielectricseparating the substrate/back gate from the CNT(s). In general, afield-effect transistor includes a source and a drain interconnected bya channel. The CNT(s) serve as the channel in a CNT-based FET. A gate(s)regulate current flow through the channel. The gate is often separatedfrom the channel by a gate dielectric.

The present techniques are, however, not limited to any of the aboveapplications. What is important is that a combination of dielectricsalong with a cleaning process are used to encapsulate at least a portionof the CNTs thereby preventing electronic disturbances of the(sensitive) CNT(s). For instance, the present techniques may be employed(in the same manner described) to form CNT interconnects. In that case,the first dielectric might simply be an interlayer dielectric (ILD) inwhich interconnects (in this case CNT interconnects) are being formed.

By way of example only, the CNTs may be cast onto the first dielectricusing a process such as spin coating from a solution. Solutions of CNTsare commercially available. The number of CNTs deposited onto the firstdielectric (ranging, e.g., from a single CNT to multiple CNTs—i.e., amesh) can be regulated in number of different ways. For example, withCNTs dispersed in a liquid media, additional liquid media can be addedto the dispersion to decrease the number of CNTs deposited on a givensurface area. If the dilution is great enough, then single CNT castingcan be accomplished. Determining the correct dilution is within thecapabilities of one skilled in the art. Alternatively, the CNTs can becast onto the surface of the first dielectric through an opening in amask. The opening is configured to permit only a certain number of CNTsto pass therethrough. For instance, the mask can be configured with anopening through which only a single CNT can pass.

Alternatively, the CNTs can be grown in place. For instance, lateral CNTgrowth can be performed (nucleated on a vertical sidewall). Lateral CNTgrowth is one way by which (horizontally) aligned CNTs can be achieved.See, for example, J. Lu et al., “Growth of horizontally aligned densecarbon nanotubes from trench sidewalls,” Nanotechnology 22, pgs. 1-6(May 2011) (hereinafter “Lu”), the contents of which are incorporated byreference as if fully set forth herein. An exemplary process forimplementing in-situ grown horizontally-aligned CNTs in accordance withthe present techniques is described in conjunction with the descriptionof FIG. 11, below.

According to an exemplary embodiment, the CNTs are doped. In the case ofa CNT-based FET, doping can be used to regulate the threshold voltageamong other electrical parameters of the device. See, for example, U.S.Pat. No. 7,253,431 issued to Afzali-Ardakani et al., entitled “Methodand Apparatus for Solution Processed Doping of Carbon Nanotube”(hereinafter “U.S. Pat. No. 7,253,431”), the contents of which areincorporated by reference as if fully set forth herein. U.S. Pat. No.7,253,431 provides a suitable method for doping CNTs that can be used inaccordance with the present techniques that employs a one-electronoxidant in a solution phase. Other suitable CNT doping techniques aredescribed, for example, in U.S. Patent Application Publication Number2013/0025662 by Afzali-Ardakani et al., entitled “Water Soluble Dopantfor Carbon Films” (hereinafter “U.S. Patent Application PublicationNumber 2013/0025662”), the contents of which are incorporated byreference as if fully set forth herein. Dopants are described in U.S.Patent Application Publication Number 2013/0025662 that are used totailor the electrical properties of the CNTs, such as lower theirresistivity. The doping can be carried out in solution, i.e., the dopantcan be added to the CNT dispersion prior to casting, and/or after theCNTs have been deposited.

Next, in step 104, the first dielectric is modified to i) clean thefirst dielectric (thereby removing contaminants from surfaces of thefirst dielectric that generate electronic disturbances for the CNTs)and, preferably, to also ii) etch back the first dielectric beneath aportion of the CNTs thereby permitting full encapsulation of at least aportion of the CNT(s) by a second dielectric (see below). The advantageto the etch back is that it places the interface between the first andsecond dielectric (remotely) away from the CNT(s). To illustrate thisconcept consider for instance the situation where, instead of etchingback the first dielectric, the second dielectric is simply depositedonto the first dielectric covering the CNT(s). The interface between thefirst and second dielectric will be right at the top surface of thefirst dielectric, i.e., at the plane of the CNT(s). Randomly distributedcharges at this interface are close to the CNT(s) and thus can affectperformance.

During modification of the first dielectric, care must be taken to keepany damage of the (already deposited) CNT(s) to a minimum, for example,by employing one or more of the following cleaning/etching processes. Inthe following examples, wet clean processes for both contaminationremoval and for etch-back are presented, as are gas-phase or plasmaprocesses for both contamination removal and for etch-back clean. Ananneal in an inert environment is also described to desorb contaminants.It is notable that any combination of these processes can be used tomodify the first dielectric. For example, a wet clean can be used forboth contamination removal and for etch-back or, alternatively, a wetetch clean can be used for contamination removal followed by a gas-phaseor plasma etch-back, or vice versa. Further, some steps may be performedin-situ depending on the cleaning/etch-back mechanism chosen. Forinstance, a gas-phase or plasma clean and/or etch-back can be performedin-situ along with deposition of the second dielectric.

As the description above provides, surface cleaning of the firstdielectric can be performed with or without an accompanying etch backbeneath the CNTs. According to an exemplary embodiment, both a surfacecleaning and etch back are performed. In that case, since the etch backinvolves a mask (see, for example, FIG. 10—described below), the etchback is preferably performed prior to the surface clean. Thus, theclean/etch back process would be: mask—etch—strip mask—clean. See FIG.10.

Each of these cleaning and etch-back processes will now be described indetail. Suitable wet chemistry cleaning processes for contaminationremoval include, but are not limited to, hydrochloric acid (HCl),hydrochloric acid:hydrogen peroxide:water (HCl:H₂O₂:H₂O), ammoniumhydroxide:hydrogen peroxide:water (NH₄OH:H₂O₂:H₂O), and/or an organicsolvent. HCl, as well as the acid-peroxide combination in HCl:H₂O₂:H₂O,is well suited to remove ionic contaminants, such as metals, from thefirst dielectric. The base-peroxide combination in NH₄OH:H₂O₂:H₂O iswell suited to removal of organic contaminants from the firstdielectric, and so are some organic solvents. Any of these wet cleanscan be used alone or in combination. For instance, a multi-step cleancan include first a treatment with NH₄OH:H₂O₂:H₂O to remove organiccomponents, followed by a clean in HCl:H₂O₂:H₂O to remove ionic speciesfrom the first dielectric. In situations where no etch-back of the firstdielectric is desired, the cleaning process has to be compatible withthis requirement. For example, organic contamination removal from anAl₂O₃ surface without etch-back cannot be performed with NH₄OH:H₂O₂:H₂O,as this solution is an efficient Al₂O₃ etchant. Instead, for example, asuitable organic solvent can be employed. See, for example, U.S. PatentApplication Publication Number 2010/0018550 by Schwartzkopf et al.,entitled “Cleaning Compositions with Very Low Dielectric Etch Rates,”the contents of which are incorporated by reference as if fully setforth herein.

Suitable wet chemistry etch-back processes include, but are not limitedto, hydrofluoric acid (HF), buffered oxide etch (BOE), NH₄OH:H₂O₂:H₂Oand/or HCl:H₂O₂:H₂O. HF and BOE are both efficient etchants for etchingoxide substrates such as, for example, SiO₂ or Al₂O₃. They alsoefficiently etch non-crystalline HfO₂, while etch rates for crystallizedHfO₂ tend to be low. Therefore, integration schemes that ensure a lowdegree of crystallinity at the time of the etch-back may be preferred.This can be achieved, for example, but employing atomic layer deposition(ALD)-grown HfO₂ that has not been exposed to temperatures in excess of400° C. NH₄OH:H₂O₂:H₂O is an efficient etchant for etching Al₂O₃.

Suitable dry cleaning processes include, but are not limited to,gas-phase and plasma cleaning with hydrogen gas (H₂), atomic hydrogen(H), hydrogen plasma, forming gas (FG), atomic oxygen (O), atomicnitrogen (N), and/or ozone (O₃). Plasma cleaning involves using highenergy ionized plasmas from these gaseous species, as opposed to their(non-plasma, low energy) normal gas-phase states.

As noted above, multiple steps of methodology 100 can be carried outin-situ. For example, a gas-phase or plasma clean can be carried out insitu with a gas-phase or plasma clean etch-back and/or deposition of thesecond dielectric (see step 106—described below). In-situ processingwithout air exposure after modification (cleaning and/or etch-back) ofthe first dielectric minimizes further contamination of the dielectricsurfaces.

Gas-phase and plasma etch-back can also be performed with, e.g., HF,hydrogen bromide (HBr), tetrafluoromethane (CF₄), trifluoromethane(CHF₃), chlorine (Cl₂)/HBr/oxygen (O₂) and mixtures of these with othergases or plasmas. As provided above, the process has to be chosen suchthat damage to the CNT is minimized. According to an exemplaryembodiment, the goal of the etch-back process is to remove some of thefirst dielectric beneath the CNT(s) such that a recess is formed in thefirst dielectric beneath a center portion of the CNT(s), and oppositeends of the CNT(s) rest on the first dielectric to either side of therecess. Thus, the CNT(s) are essentially suspended over the recess. Whenthe second dielectric is deposited onto the first dielectric andsurrounding the CNT(s) in the recess (see below), the second dielectricin the recess interfaces with the first dielectric at a distance awayfrom the CNT(s). To enable selective recessing of the first dielectricbeneath the CNT(s), a mask is preferably employed during the etch-backprocess through which only a select region of the CNT(s)/firstdielectric is exposed. Following etch-back, the mask can be removed.

Cleaning of the first dielectric can also be carried out using an annealin an inert environment. By way of example only, an anneal at atemperature of from about 100° C. to about 500° C., and rangestherebetween, in an inert gas such as nitrogen (N₂), argon (Ar), and/orhelium (He) effectively desorbs contaminants from the first dielectric.

Next, in step 106, a second dielectric is deposited onto the firstdielectric and surrounding the CNT(s). When the first dielectric isrecessed, the second dielectric can fully surround the CNT(s). Asprovided above, suitable dielectrics for the second dielectric include,but are not limited to, SiO₂, Si₃N₄, Al₂O₃, HfO₂, ZrO₂, TiO₂, La₂O₃, andcombinations thereof. The first and second dielectrics can be the samematerial, or they can be different. Preferably, deposition of the seconddielectric is performed in-situ, without air exposure after modificationof the first dielectric (step 104)—see above. In-situ cleaning/etch-backand second dielectric deposition minimizes further contamination of thedielectric surfaces.

According to an exemplary embodiment, the second dielectric is depositedusing atomic layer deposition (ALD), plasma-enhanced ALD, chemical vapordeposition (CVD), sputtering, or chemical solution deposition. ALD canbe desirable because it generally provides better film conformality onnon-planar structures than, e.g., a sputtering process.

An exemplary embodiment employing methodology 100 to form a CNT-baseddevice is now described by way of reference to FIGS. 2-9. As shown inFIG. 2, the process begins (as per step 102 of methodology 100) with atleast one CNT 202 being deposited onto a first dielectric film 204 thatis present on a substrate. Suitable substrates include, but are notlimited to, semiconductor (e.g., silicon (Si), germanium (Ge), silicongermanium (SiGe) substrates), metal foil, plastic substrates, etc. Ifconductive, the substrate can serve as a back contact of the device. Forinstance, a metal foil or doped semiconductor substrate can also serve aback gate electrode. With a back-gated device configuration, the firstdielectric 204 serves as the gate dielectric.

As described above, suitable dielectrics for the first dielectricinclude, but are not limited to, SiO₂, Si₃N₄, Al₂O₃, HfO₂, ZrO₂, TiO₂,La₂O₃, and combinations thereof. As described above, the CNT(s) 202 canbe doped, e.g., either in solution or in situ, and can be deposited ontothe first dielectric 204 using a suitable casting process, such asspin-on casting. Mechanisms for regulating the number of CNT(s) 202deposited onto the first dielectric 204 were described above.

Next, as shown in FIG. 3, the first dielectric 204 is modified (as perstep 104 of methodology 100) during which the first dielectric 204 is i)cleaned to remove contaminants therefrom and, preferably, ii)etched-back beneath a (central) portion of the CNT(s). Suitable wet,dry, and annealing processes for cleaning/etching-back the firstdielectric film were described above. It is notable that the cleaningand etch-back can be performed as distinct steps and, while optional,the etch back favorably places an interface of the first/seconddielectrics remotely away from the CNTs (see below). However,embodiments are anticipated herein where a cleaning is performed(without etch back) to remove the contaminants from the first dielectric204. See, for example, FIG. 3A.

As shown in FIG. 3, when etch-back is performed a recess is formed inthe first dielectric 204 beneath a central portion of the CNT(s).Opposite ends of the CNT(s) rest on (the top surface/non-recessedportion of) the first dielectric to either side of the recess. Thus, theCNT(s) are suspended over the recess. When a second dielectric (seebelow) is deposited onto the first dielectric 204, the recess providesaccess to the entire circumference of the CNT(s). Therefore, the seconddielectric fully surrounds the CNT(s). By comparison, in the case wherethe first dielectric 204 is not recessed, the CNT(s) rest on the firstdielectric 204 (see, for example, FIG. 3A). Thus, the second dielectriccan only partially surround the CNT(s) since it does not have fullaccess around the CNT(s).

Next, as shown in FIG. 4, a second dielectric film 402 is deposited ontothe first dielectric 204 and fully surrounding the CNT(s) 202 in therecess. As described above, suitable dielectrics for the seconddielectric include, but are not limited to, SiO₂, Si₃N₄, Al₂O₃, HfO₂,ZrO₂, TiO₂, La₂O₃, and combinations thereof. Advantageously, as shown inFIG. 4, by recessing the first dielectric 204, the interface between thefirst dielectric 204 and the second dielectric 402 is remote (i.e., awayfrom the CNT(s) 202). This configuration preferably places any straycharges and/or contaminants at the interface of the dielectrics awayfrom the CNT(s). According to an exemplary embodiment, the interfacebetween the first dielectric 204 and the second dielectric 402 is at adistance d away from the CNT(s) that is greater than or equal to about 1nanometer (nm), e.g., from about 1 nm to about 5 nm, and rangestherebetween.

By comparison, when modifying the first dielectric 204 without anetch-back, the second dielectric 402 a only partially surrounds theCNT(s) and interfaces with the first dielectric 204 adjacent to(immediately beneath) the CNT(s). See, for example, FIG. 4A.

As shown in FIGS. 4 and 4A, the second dielectric 402 can be patternedto surround/cover only a (central) portion of the CNT(s) 202, such thatportions of the CNT(s) 202 extend out to either side of the seconddielectric 402. When forming a device such as a CNT-based transistor,this is done to permit source and drain contacts, etc. to be formed.However, when forming other device structures such as interconnects, itmay be desirable to cover the entire length of the CNT(s) 202 with thesecond dielectric 402. Standard lithography and etching techniques maybe employed to pattern the second dielectric 402 from a blanket layer.

As provided above, by way of example only, the present techniques can beemployed to fabricate a CNT-based transistor. For instance, as shown inFIG. 5, source and drain contacts 502 are formed on opposite ends of theCNT(s) 202. While FIG. 5 illustrates the process in the context of arecessed dielectric, the same steps for forming the transistor areperformed regardless of whether or not an etch-back is performed.According to an exemplary embodiment, the source and drain contacts 502are metal contacts formed on the CNT(s) 202 using a process such asevaporation or sputtering.

If, as provided above, the substrate is conductive and a back-gateddevice is being formed, then the transistor is now complete with a gate(substrate), CNT channel, and source and drain contacts. On the otherhand, for a top gated device a gate 602 is next formed over the CNT(s)202, separated from the CNT(s) 202 by the second dielectric 402. SeeFIG. 6. In that configuration, the second dielectric 402 serves as thegate dielectric. The gate 602 is formed from a conductor such as dopedpoly-silicon, a metal or metals, or combinations thereof.

As provided above, embodiments are considered herein where CNT(s) 202includes a single CNT, or alternatively where CNT(s) 202 includesmultiple CNTs either as an ordered/aligned array, or as a randomoriented mesh. A top view (e.g., from vantage point A in FIG. 5) of asingle CNT device, a multiple aligned CNT device, and a multiple randomCNT mesh device are shown in FIGS. 7, 8, and 9, respectively.

As described in conjunction with the description of step 104 of FIG. 1above, when a surface cleaning and etch back of the first dielectric areboth performed, the etch back is preferably done prior to the surfaceclean. See, for example, exemplary methodology 1000 shown in FIG. 10. Asshown in FIG. 10, after the CNT(s) have been deposited, grown, etc. onthe first dielectric (see step 1002), a mask is formed over the CNT(s).See step 1004. As shown in step 1004, the mask covers all but a centralportion of the CNT(s) under which the first dielectric will be recessed.Specifically, as shown in step 1006, the above-described etch back isperformed through the mask to recess the first dielectric beneath theCNT(s). As shown in step 1006, the recess is performed under a centralportion of the CNT(s), leaving the ends of the CNT(s) in contact withthe first dielectric to either side of the recess.

Following the recess etch, the mask is removed (see step 1008) and asurface clean is performed (see step 1010). The balance of the processcan proceed in the same manner as described above, e.g., encapsulationwith the second dielectric etc.

As provided above, one method contemplated herein for ‘placing’ the CNTson the first dielectric is by in-situ growth of the CNTs. According toan exemplary embodiment, growth from a vertical surface is used toproduce horizontally aligned CNTs on the first dielectric. See, forexample, methodology 1100 of FIG. 11. As shown in step 1102, a verticalsurface is created on the first dielectric. According to an exemplaryembodiment, a silicon layer is deposited onto the first dielectric and,according to the process detailed in Lu, a trench is formed in thesilicon layer. However, any vertical surface on which CNT growth can benucleated would suffice. Next, as shown in step 1104, a catalyst isformed on the vertical surface. A suitable catalyst for CNT growthincludes, but is not limited to, an iron catalyst. The catalyst is usedto grow horizontally-aligned CNTs over the first dielectric (see step1106) using, e.g., a standard thermal CVD process (see Lu). The verticalsurface can then be removed. See step 1108.

The present techniques are further described by way of reference to thefollowing non-limiting example:

Perform a 2-step clean where, in step 1 the target contaminants areparticles, light organics, and some metals (e.g., cobalt (Co), copper(Cu), zinc (Zn), titanium (Ti), and/or tantalum (Ta)). Specifically, awet clean is performed in step 1 using NH₄OH:H₂O₂:H₂O=1:1:40 at 30° C.for 5 minutes. Use of a lower temperature (i.e., 30° C. as opposed to65° C.-80° C.) reduced bubbling and H₂O₂ decomposition while maintainingthe same cleaning performance. This chemistry was found to etch Al₂O₃but not HfO₂, and to slowly etch SiO₂.

In step 2, the target contaminants are metals (some of which aredeposited from solution in step 1). Specifically, a wet clean isperformed in step 2 using HCl:H₂O₂:H₂O=1:1:5-1:1:50 at 40-75° C. Thischemistry was found to etch Al₂O₃ slowly, but not HfO₂ or SiO₂.

Alternatively, step 2 is performed to remove metals using HCl:H₂O=1:100at 60° C. for 5 minutes. This chemistry was found not to etch Al₂O₃,HfO₂ or SiO₂.

Although illustrative embodiments of the present invention have beendescribed herein, it is to be understood that the invention is notlimited to those precise embodiments, and that various other changes andmodifications may be made by one skilled in the art without departingfrom the scope of the invention.

What is claimed is:
 1. A method for forming a carbon nanotube-baseddevice, the method comprising: providing at least one carbon nanotubedisposed on a first dielectric; removing contaminants from surfaces ofthe first dielectric; and depositing a second dielectric onto the firstdielectric and at least partially surrounding the at least one carbonnanotube.
 2. The method of claim 1, further comprising: depositing theat least one carbon nanotube onto the first dielectric.
 3. The method ofclaim 1, further comprising: growing the at least one carbon nanotube onthe first dielectric.
 4. The method of claim 1, wherein the firstdielectric is selected from the group consisting of: silicon oxide,silicon nitride, aluminum oxide, hafnium oxide, zirconium oxide,titanium oxide, lanthanum oxide, and combinations thereof.
 5. The methodof claim 1, wherein the first dielectric is disposed on a substrate. 6.The method of claim 5, wherein the substrate is electrically conductiveand serves as a back gate of the carbon nanotube-based device, andwherein the first dielectric serves as a gate dielectric that separatesthe back gate of the device from the at least one carbon nanotube. 7.The method of claim 1, wherein multiple carbon nanotubes are disposed onthe first dielectric, and wherein the multiple carbon nanotubes comprisean aligned array.
 8. The method of claim 1, wherein multiple carbonnanotubes are disposed on the first dielectric, and wherein the multiplecarbon nanotubes comprise a randomly oriented mesh.
 9. The method ofclaim 1, wherein the contaminants are removed from the surfaces of thefirst dielectric using a wet cleaning process.
 10. The method of claim9, wherein the wet cleaning process is selected from the groupconsisting of: hydrochloric acid (HCl), hydrochloric acid:water(HCl:H₂O), hydrochloric acid:hydrogen peroxide:water (HCl:H₂O₂:H₂O),ammonium hydroxide:hydrogen peroxide:water (NH₄OH:H₂O₂:H₂O), andcombinations thereof.
 11. The method of claim 1, wherein thecontaminants are removed from the surfaces of the first dielectric usinga dry cleaning process.
 12. The method of claim 11, wherein the drycleaning process is selected from the group consisting of: gas-phasecleaning and plasma cleaning.
 13. The method of claim 1, wherein thecontaminants are removed from the surfaces of the first dielectric byannealing in an inert environment to desorb the contaminants from thesurfaces of the first dielectric.
 14. The method of claim 1, wherein thesecond dielectric is selected from the group consisting of: siliconoxide, silicon nitride, aluminum oxide, hafnium oxide, zirconium oxide,titanium oxide, lanthanum oxide, and combinations thereof.
 15. Themethod of claim 1, wherein the removing of the contaminants and thedepositing of the second dielectric are performed in-situ.
 16. Themethod of claim 1, further comprising: forming source and drain contactsto the at least one carbon nanotube.
 17. The method of claim 1, furthercomprising: forming a gate over the at least one carbon nanotube,wherein the second dielectric serves as a gate dielectric that separatesthe gate from the at least one carbon nanotube.
 18. A carbonnanotube-based device, comprising: a first dielectric; at least onecarbon nanotube disposed on the first dielectric; a recess in the firstdielectric beneath a center portion of the at least one carbon nanotube;and a second dielectric disposed on the first dielectric, wherein thesecond dielectric fully surrounds the at least one carbon nanotube inthe recess, and wherein an interface between the first dielectric andthe second dielectric in the recess is separated from the at least onecarbon nanotube by a distance d of from about 1 nanometer to about 5nanometers, and ranges therebetween.
 19. The carbon nanotube-baseddevice of claim 19, wherein the first dielectric is selected from thegroup consisting of: silicon oxide, silicon nitride, aluminum oxide,hafnium oxide, zirconium oxide, titanium oxide, lanthanum oxide, andcombinations thereof.
 20. The carbon nanotube-based device of claim 19,wherein the second dielectric is selected from the group consisting of:silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, zirconiumoxide, titanium oxide, lanthanum oxide, and combinations thereof.